Method of manufacturing optical modulator

摘要

A method for manufacturing an optical modulator having a laser diode section and an EAM section. LD growth layers which are semiconductor layers for manufacturing the laser diode section, are formed on a semiconductor substrate. An EAM absorption layer for forming the EAM section is then formed on the semiconductor substrate. The photoluminescent wavelength of the EAM absorption layer is then measured. The LD growth layers are then etched to form a stripe structure section. The width of the stripe structure section is determined such that the difference between the lasing wavelength of the LD section and the photoluminescent wavelength of the EAM section is close to a design value.

主权项

1. A method of manufacturing an optical modulator having a laser diode section generating light at a lasing wavelength and an electroabsorption modulator section for modulating the light generated by the laser diode section, comprising:
forming a laser diode (LD) growth layer on a semiconductor substrate, the LD growth layer being a semiconductor layer for manufacturing the laser diode section; forming an electroabsorption layer on the semiconductor substrate, the electroabsorption layer being for forming the electroabsorption modulator section; measuring photoluminescent wavelength of the electroabsorption layer and comparing the photoluminscent wavelength measured to a design photoluminscent wavelength; if the photoluminscent wavelength measured is different from the design photoluminscent wavelength, calculating an adjusted width of a stripe structure of the optical modulator, as compared to a design width of the stripe structure of the optical modulator so that a difference between (i) a design lasing wavelength of the light generated by the laser diode section and the photoluminscent wavelength measured, becomes smaller with respect to a design value, wherein the design value is a difference between (ii) a design photoluminscent wavelength of the electroabsorption modulator section and the design lasing wavelength of the laser diode section; and etching at least the LD growth layer to form a stripe structure in at least the laser diode section having a width equal to the adjusted width.