Chemical mechanical polishing slurry composition and method for producing semiconductor device using the same

摘要

A slurry composition for chemical mechanical polishing, including 0.1% to 20% by weight of an aminosilane-surface treated polishing agent; 0.001% to 5% by weight of an additive selected from amino acids, amino acid derivatives, salts thereof, and combinations thereof; 0.0001% to 0.5% by weight of a corrosion inhibitor; and 0.01% to 5% by weight of an oxidizing agent, with the balance being a solvent, is provided. The slurry composition for chemical mechanical polishing has a conspicuously high polishing rate for silicon oxide films, is capable of selectively preventing the removal of silicon nitride films, does not cause an imbalance in polishing, gives an excellent degree of planarization, has excellent stability over time and dispersion stability, causes less generation of particles and scratches, and produces very satisfactory polished surfaces of barrier metal films and oxide films.

主权项

1. A slurry composition for chemical mechanical polishing, comprising:
0.1% to 20% by weight of an aminosilane-surface treated polishing agent; 0.001% to 5% by weight of any one additive selected from the group consisting of amino acids, amino acid derivatives, salts thereof, and combinations thereof; 0.0001% to 0.5% by weight of a corrosion inhibitor; and 0.01% to 5% by weight of an oxidizing agent; with the balance being a solventwherein the slurry composition for chemical mechanical polishing has a pH value of 3 to 3.9, a polishing selection ratio for silicon oxide film to silicon nitride film of 7 to 50, and a polishing rate for PETEOS of 1458 Å/min or greater.