Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates

摘要

Three dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling a waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.

主权项

1. A method of fabricating a three dimensionally integrated semiconductor system, comprising:
providing a semiconductor-on-insulator (SeOI) substrate comprising a layer of semiconductor material and a layer of electrically insulating material disposed adjacent a major surface of the layer of semiconductor material; forming at least one photoactive device on the layer of semiconductor material of the SeOI substrate; forming at least one waveguide comprising a portion of the layer of semiconductor material of the SeOI substrate, and operatively coupling the at least one waveguide with the at least one photoactive device; forming at least one current/voltage converter over the layer of semiconductor material of the SeOI substrate; electrically coupling the at least one photoactive device and the at least one current/voltage converter; bonding at least one semiconductor device over the SeOI substrate by a direct bonding process at a temperature of 500° C. or less, wherein the at least one semiconductor device and the at least one photoactive device are disposed on opposing sides of the layer of electrically insulating material of the SeOI substrate; and electrically coupling the at least one current/voltage converter and the at least one semiconductor device bonded over the SeOI substrate.