发明名称 |
Method for manufacturing oxide thin film transistor |
摘要 |
Disclosed is a method for manufacturing an oxide thin film transistor, including: forming a gate electrode on a substrate on which a buffer layer is formed; forming a gate insulation layer on an entire surface of the substrate on which the gate electrode is formed; forming an oxide semiconductor layer on the gate insulation layer; forming a first etch stop layer on the oxide semiconductor layer; forming a second etch stop layer on the first etch stop layer by an atomic layer deposition method; patterning the first etch stop layer and the second etch stop layer, or forming a contact hole, through which a part of the oxide semiconductor layer is exposed, in the first etch stop layer and the second etch stop layer; forming a source electrode and a drain electrode on the first etch stop layer and the second etch stop layer; and forming a passivation layer on the entire surface of the substrate on which the source electrode and the drain electrode are formed. |
申请公布号 |
US8841665(B2) |
申请公布日期 |
2014.09.23 |
申请号 |
US201313849111 |
申请日期 |
2013.03.22 |
申请人 |
Electronics and Telecommunications Research Institute |
发明人 |
Park Sang Hee;Ryu Min Ki;Oh Him Chan;Hwang Chi Sun |
分类号 |
H01L21/16;H01L21/76;H01L21/00;H01L29/786;H01L29/66 |
主分类号 |
H01L21/16 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A method for manufacturing an oxide thin film transistor, comprising:
forming a gate electrode on a substrate on which a buffer layer is formed; forming a gate insulation layer on an entire surface of the substrate on which the gate electrode is formed; forming an oxide semiconductor layer on the gate insulation layer; forming a first etch stop layer on the oxide semiconductor layer; forming a second etch stop layer on the first etch stop layer by an atomic layer deposition method; patterning the first etch stop layer and the second etch stop layer, or forming a contact hole, through which a part of the oxide semiconductor layer is exposed, in the first etch stop layer and the second etch stop layer; forming a source electrode and a drain electrode on the first etch stop layer and second etch stop layer; and forming a passivation layer on the entire surface of the substrate on which the source electrode and the drain electrode are formed. |
地址 |
Daejeon KR |