Methods for forming interconnect structures

摘要

Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material.

主权项

1. A method of forming an interconnect on a substrate, comprising:
(a) depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first physical vapor deposition process at a first temperature, which deposits the material at a greater rate on the upper surface than on a bottom surface of the feature; (b) prior to heating the material deposited in (a), depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second physical vapor deposition process at a second temperature, which deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and (c) after (a) and (b), heating the deposited material to a third temperature that is greater than the first temperature and the second temperature to draw the deposited material towards the bottom surface of the feature to only partially fill the feature with the deposited material.