Method of forming polycrystalline silicon layer, and thin film transistor and organic light emitting device including the polycrystalline silicon layer

摘要

A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

主权项

1. A method of forming a polycrystalline silicon layer, comprising:
forming a first amorphous silicon layer and a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other; and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer, wherein the forming of the first amorphous silicon layer and the second amorphous silicon layer includes: depositing the first amorphous silicon layer while providing a first gas with silane gas; and depositing the second amorphous silicon layer while providing a second gas with silane gas,
wherein the first gas and the second gas are different gases and are different from silane gas.