High density bulk fin capacitor

摘要

A high density bulk fin capacitor is disclosed. Fin capacitors are formed near finFETs by further etching the fin capacitors to provide more surface area, resulting in increased capacitance density. Embodiments of the present invention include depletion-mode varactors and inversion-mode varactors.

主权项

1. A method of making a fin capacitor, comprising:
forming a first doped well in a semiconductor substrate; forming a second doped well in a semiconductor substrate; forming a first group of fins on the first doped well; forming a second group of fins on the second doped well; depositing an insulator layer on the first group of fins and the second group of fins; removing a portion of the insulator layer from the first group of fins; doping the first group of fins; and forming a first gate region of a first depth disposed over an upper portion of the first set of fins; and forming a second gate region of a second depth disposed over an upper portion of the second set of fins, wherein the first depth is greater than the second depth.