Method of lift-off patterning thin films in situ employing phase change resists

摘要

Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

主权项

1. Method for making a patterned thin film of an organic semiconductor for use in an electrical device structure comprising:
condensing a resist gas into a solid film onto a substrate selected from the group consisting of glass, metal foil, polymer foil or ceramic cooled to a temperature below the condensation point of the resist gas; compressing the resist subsequent to condensation by application of force to achieve a selected density; selectively heating by laser light, resistive heating or by thermal contact with raised features on a stamp the condensed solid film to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film with feature dimensions of five micrometers or larger; coating an organic semiconductor film on the patterned resist film; and heating the patterned resist film to cause it to sublime away and to lift off because of the phase change.