发明名称 |
Semiconductor apparatus and substrate |
摘要 |
A semiconductor apparatus includes a semiconductor substrate having a main surface, a multilayer structure circuit formed over the main surface of the semiconductor substrate, a protective wall formed in the same layer as an uppermost layer of the multilayer structure circuit so as to surround the multilayer structure circuit in plan view, and an alignment mark formed in the same layer as the uppermost layer. The alignment mark is formed so as to contact at least part of the protective wall. |
申请公布号 |
US8841784(B2) |
申请公布日期 |
2014.09.23 |
申请号 |
US201213553579 |
申请日期 |
2012.07.19 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Ishida Masahiro |
分类号 |
H01L23/544;H01L23/00 |
主分类号 |
H01L23/544 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A semiconductor apparatus comprising:
a semiconductor substrate having a main surface; a multilayer structure circuit formed over the main surface of the semiconductor substrate; a protective wall formed in the same layer as an uppermost layer of the multilayer structure circuit so as to surround the multilayer structure circuit in plan view; an alignment mark formed in the same layer as the uppermost layer, wherein the alignment mark is formed so as to contact at least part of the protective wall; and a protective film covering a to surface of the uppermost layer of the multilayer structure circuit, wherein the protective film covers respective top surfaces of the protective wall and the alignment mark. |
地址 |
Kanagawa JP |