发明名称 Layout content analysis for source mask optimization acceleration
摘要 The invention provides for the acceleration of a source mask optimization process. In some implementations, a layout design is analyzed by a pattern matching process, wherein sections of the layout design having similar patterns are identified and consolidated into pattern groups. Subsequently, sections of the layout design corresponding to the pattern groups may be analyzed to determine their compatibility with the optical lithographic process, and the compatibility of these sections may be classified based upon a “cost function.” With further implementations, the analyzed sections may be classified as printable or difficult to print, depending upon the particular lithographic system. The compatibility of various sections of a layout design may then be utilized to optimize the layout design during a lithographic friendly design process. For example, during the design phase, sections categorized as difficult to print may be flagged for further optimization, processing, or redesign. In further implementations, the difficult-to-print sections may be subjected to a source mask optimization process. Subsequently, the entire layout design may receive a conventional resolution enhancement treatment using the optimized source.
申请公布号 US8843859(B2) 申请公布日期 2014.09.23
申请号 US201213649962 申请日期 2012.10.11
申请人 Mentor Graphics Corporation 发明人 Torres Robles Juan Andres;Otto Oberdan;Granik Yuri
分类号 G06F17/50;G06F19/00;G01R31/26;G03F1/00;G03F1/36;G03F1/38;G21K5/00;G06K9/00;H01L21/66;H01L21/00 主分类号 G06F17/50
代理机构 Plumsea Law Group, LLC 代理人 Plumsea Law Group, LLC
主权项 1. A computer implemented method comprising: identifying a layout design for a mask and a partition distance; forming a planar grid based upon the partition distance; overlaying the planar grid onto the layout design to define a plurality of layout sections; consolidating the plurality of layout sections into a plurality of pattern groups, each pattern group including layout sections having geometric structures or shapes similar to each other relative to a reference point; using a computer system to derive a pattern group printing difficulty factor for one or more of the plurality of pattern groups; selecting one or more of the plurality of layout sections for source mask optimization based in part upon the pattern group printing difficulty factor; and applying a source mask optimization to the one or more selected layout sections.
地址 Wilsonville OR US