Method for forming two device wafers from a single base substrate utilizing a controlled spalling process

摘要

The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer.

主权项

1. A method for forming two device wafers using a single base substrate, said method comprising:
providing a base substrate of unitary construction and of uniform material composition, wherein said uniform material composition is selected from the group consisting of a ceramic, a glass and a semiconductor material; depositing a first device layer directly on a topmost surface of the base substrate and a second device layer directly on a bottommost surface of the base substrate, wherein said first and second device layers each comprise a semiconductor material; and spalling the base substrate at room temperature or a temperature below room temperature and in a region of said base substrate and between the first and second device layers, wherein said spalling provides a first device wafer including a portion of the base substrate and the first device layer, and a second device wafer including another portion of the base substrate and the second device layer.