Nitride semiconductor device using selective growth and manufacturing method thereof

摘要

A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

主权项

1. A semiconductor device comprising:
a substrate; a first GaN layer formed on the substrate; an AlGaN layer formed on the first GaN layer; a second GaN layer formed on the AlGaN layer and including a p type GaN layer; and a gate electrode formed on the second GaN layer, wherein the p type GaN layer is in contact with a portion of the gate electrode and includes a first layer and a second layer, wherein the first layer is in contact with a lower portion of one side of the gate electrode, and the second layer is in contact with a lower portion of the other side of the gate electrode, and wherein the second GaN layer has a recess, and the p type GaN layer is formed in the recess.