Method of making stackable semiconductor assembly with bump/flange heat spreader and dual build-up circuitry

摘要

A method of making a stackable semiconductor assembly that includes a semiconductor device, a heat spreader, an adhesive, a plated through-hole, first build-up circuitry and second build-up circuitry is disclosed. The heat spreader includes a bump and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity, electrically connected to the first build-up circuitry and thermally connected to the bump. The bump extends into an opening in the adhesive and the flange extends laterally from the bump at the cavity entrance. The first build-up circuitry and the second build-up circuitry extend beyond the semiconductor device in opposite vertical directions. The plated through-hole extends through the adhesive and provides signal routing between the first build-up circuitry and the second build-up circuitry. The heat spreader provides heat dissipation for the semiconductor device.

主权项

1. A method of making a thermally enhanced stackable semiconductor assembly, comprising:
providing a bump, a flange, an adhesive and a conductive layer with an aperture, wherein the bump defines a cavity that faces in a first vertical direction, covers the cavity in a second vertical direction opposite the first vertical direction, is adjacent to and integral with the flange and extends from the flange in the second vertical direction, and the flange extends laterally from the bump in lateral directions orthogonal to the vertical directions; then attaching the flange and the bump to the conductive layer via the adhesive between the flange and the conductive layer and between the bump and the conductive layer, including aligning the bump with the aperture; then mounting a semiconductor device that includes a contact pad on the bump at the cavity; providing a first build-up circuitry on the semiconductor device and the flange that extends from the semiconductor device and the flange in the first vertical direction and is electrically connected to the semiconductor device; providing a second build-up circuitry that extends beyond the bump, the adhesive and the conductive layer in the second vertical direction; and providing a plated through-hole that extends through the adhesive in the vertical directions to provide an electrical connection between the first build-up circuitry and the second build-up circuitry.