Method for making light emitting diode

摘要

A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer.

主权项

1. A method for making light emitting diode, the method comprising:
providing a substrate having an epitaxial growth surface; epitaxially growing a first semiconductor layer, an active layer, and a second semiconductor layer on the epitaxial growth surface of the substrate in that sequence; forming a first optical symmetric layer on the second semiconductor layer; applying a metallic layer on the first optical symmetric layer; forming a second optical symmetric layer on the metallic layer; applying a first electrode electrically connected to the first semiconductor layer; and applying a second electrode electrically connected to the second semiconductor layer; wherein a first effective refractive index n1 of the second optical symmetric layer, and a second effective refractive index n2 of an integrated structure satisfy |n1−n2|≦0.5, wherein the integrated structure comprises the substrate, the composite semiconductor layer, and the first optical symmetric layer.