发明名称 Light sensing circuit, and remote optical touch panel and image acquisition apparatus including the light sensing circuit
摘要 Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.
申请公布号 US8842095(B2) 申请公布日期 2014.09.23
申请号 US201012926922 申请日期 2010.12.17
申请人 Samsung Electronics Co., Ltd. 发明人 Park Sung-ho;Song I-hun;Kim Chang-jung;Jeon Sang-hun;Ahn Seung-eon
分类号 G06F19/00;G06F3/0354;G06F3/041;G01J1/44;G06F3/038;H01L31/113;H01L27/12;H01L27/146 主分类号 G06F19/00
代理机构 Harness, Dickey & Pierce 代理人 Harness, Dickey & Pierce
主权项 1. A light sensing circuit, comprising: a light-sensitive oxide semiconductor transistor including a channel layer of a light-sensitive oxide semiconductor, a row selection line supplying a row selection signal to a gate of the light-sensitive oxide semiconductor transistor; a driving voltage line supplying a driving voltage to a drain of the light-sensitive oxide semiconductor transistor; and a data line connected to a source of the light-sensitive oxide semiconductor transistor and outputting data, the light-sensitive oxide semiconductor transistor being configured to operate as a light sensing device that senses light incident on the transistor and as a switching circuit that outputs data in response to the sensed incident light without storing charges associated with the incident light, in a storage element, wherein, when the gate voltage is a first voltage, the channel layer is in a non-conducting state irrespective of an intensity or amount of the incident light and no data is outputted, and when the gate voltage is a second voltage, the channel layer is in a conducting state when light is incident on the transistor and data is outputted as current corresponding to an intensity or an amount of the incident light.
地址 Gyeonggi-do KR