| 摘要 |
A rod-shaped semiconductor device has a light receiving function or a light emitting function. The semiconductor device is provided with a rod-shaped base material composed of a p-type or n-type semiconductor crystal; a separate conductive layer, which is formed at a portion excluding a strip-shaped portion parallel to the axis center of the base material on the surface layer portion of the base material, and has a conductivity type different from that of the base material; a pn junction formed by the base material and the separate conductive layer; a strip-shaped first electrode, which is formed on the surface of the strip-shaped portion of the base material and is connected to the base material by ohmic connection; and a strip-shaped second electrode, which is formed on the opposite side to the first electrode by having the axis center of the base material in between, and is connected to the separate conductive layer by ohmic connection. |
