MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A memory device comprises: a gate structure which includes a first conductive film pattern and a second conductive film pattern, having a smaller resistance than the first conductive film pattern, wherein the first conductive film pattern and the second conductive film pattern are sequentially stacked on a substrate; a contact plug penetrating through the second conductive film pattern and a part of the first conductive film pattern in which a side wall directly comes into contact with at least a part of the second conductive film pattern; and a spacer which surrounds a part of the side wall of the contact plug and comes into contact with the gate structure.