ESD protection of an RF PA semiconductor die using a PA controller semiconductor die

摘要

A power amplifier (PA) controller semiconductor die and a first radio frequency (RF) PA semiconductor die are disclosed. The PA controller semiconductor die includes a first electro-static discharge (ESD) protection circuit, which ESD protects and provides a first ESD protected signal. The RF PA semiconductor die receives the first ESD protected signal. In one embodiment of the PA controller semiconductor die, the first ESD protected signal is an envelope power supply signal. The PA controller semiconductor die may be a Silicon complementary metal-oxide-semiconductor (CMOS) semiconductor die and the RF PA semiconductor die may be a Gallium Arsenide semiconductor die.

主权项

1. Circuitry comprising:
a power amplifier (PA) controller semiconductor die comprising a plurality of electro-static discharge (ESD) protection circuits, which are each adapted to provide ESD protection and provide a corresponding one of a plurality of ESD protected signals, wherein one of the plurality of ESD protected signals is an envelope power supply signal and another one of the plurality of ESD protected signals is a bias power supply signal; and a first radio frequency (RF) PA semiconductor die adapted to receive one or more of the plurality of ESD protected signals.