发明名称 Manufacturing method and apparatus for semiconductor device
摘要 A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.
申请公布号 US8841205(B2) 申请公布日期 2014.09.23
申请号 US201113217736 申请日期 2011.08.25
申请人 Kabushiki Kaisha Toshiba 发明人 Kamimura Masaki;Shimizu Takashi;Miyazaki Kunihiro
分类号 H01L21/20;H01L21/36;H01L21/31;G05B19/418;H01L21/66 主分类号 H01L21/20
代理机构 White & Case LLP 代理人 White & Case LLP
主权项 1. A manufacturing method for a semiconductor device, comprising: performing a first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a first characteristic with respect to the first processing of the plurality of wafers; obtaining a second characteristic with respect to a second processing of an other plurality of wafers in a second processing apparatus after the first processing, the second characteristic being obtained by updating a past measured value of the second characteristic with respect to the second processing in the second processing apparatus in the past to a latest measured value of the second characteristic, and predicting a characteristic distribution which is formed by characteristic of each of semiconductor devices which is formed on the other plurality of wafers based on the latest measured value; and determining a second processing order, which is different from the first processing order, for wafers to be processed by the second processing apparatus based on the first characteristic and the second characteristic.
地址 Tokyo JP