Simultaneously forming a through silicon via and a deep trench structure

摘要

A through silicon via (TSV) and a deep trench capacitor (DTCap) or a deep trench isolation (DTI) are simultaneously formed on the same substrate by a single mask and a single reactive ion etching (RIE). The TSV trench is wider and deeper that the DTCap or DTI trench. The TSV and DTCap or DTI are formed with different dielectric materials on the trench sidewalls. The TSV and DTCap or DTI are perfectly aligned.

主权项

1. A device, comprising:
a substrate; a first trench and a second trench simultaneously formed in the substrate, wherein the first trench is wider and deeper than the second trench; a node dielectric layer on a bottom and sidewalls of the second trench and only on the sidewalls of the first trench; a first material filling the second trench; a liner on the first trench sidewall node dielectric layer; and a conductive material filling the first trench, wherein a bottom surface of the substrate is substantially coplanar with a bottom surface of the conductive material.