Methods for scribing of semiconductor devices with improved sidewall passivation

摘要

A method of singulating semiconductor devices in the close proximity to active structures by controlling interface charge of semiconductor device sidewalls is provided that includes forming a scribe on a surface of a semiconductor devices, where the scribe is within 5 degrees of a crystal lattice direction of the semiconductor device, cleaving the semiconductor device along the scribe, where the devices are separated, using a coating process to coat the sidewalls of the cleaved semiconductor device with a passivation material, where the passivation material is disposed to provide a fixed charge density at a semiconductor interface of the sidewalls, and where the fixed charge density interacts with charge carriers in the bulk of the material.

主权项

1. A method of singulating semiconductor devices in the close proximity to active structures by controlling interface charge of semiconductor device sidewalls, comprising:
a. forming a scribe on a surface of a single crystal semiconductor device, wherein said scribe is within 5 degrees of a crystal lattice direction of said single crystal semiconductor device; b. cleaving said single crystal semiconductor device along said scribe, wherein said single crystal semiconductor devices are separated; c. using a coating process to coat the entire sidewalls of said cleaved single crystal semiconductor device with a passivation material, d. using a thickness of said passivation material to form a fixed charge density at an interface of said cleaved single crystal semiconductor sidewalls; and e. using said fixed charge density at an interface of said single crystal semiconductor device sidewalls to interact with charge carriers in the bulk of said single crystal semiconductor device, wherein said interaction comprises controlling the distribution of said charge carriers in the bulk of said single crystal semiconductor device, using said thickness of said passivation material, and controlling an electric field at an edge of said single crystal semiconductor device, using said thickness of said passivation material, wherein said single crystal semiconductor device is singulated proximal to an active area of said single crystal semiconductor device.