DITCHES NEAR SEMICONDUCTOR FINS AND METHODS FOR FORMING THE SAME

摘要

A device includes a semiconductor substrate and isolation regions which are extended to the inner part of the semiconductor substrate. A semiconductor strip is located between the isolation regions and is in contact with the isolation regions. A semiconductor fin is overlapped with the semiconductor strip and is combined with the semiconductor strip. A ditch is extended from the upper end surface of the isolation regions to the inner part of the isolation regions. The ditch is adjacent to the semiconductor fin.