Semiconductor device and method of manufacturing semiconductor device

摘要

Provided is a semiconductor device including active regions formed in a semiconductor substrate and arranged in a first direction parallel to a surface of the semiconductor substrate; a first element isolating region formed in the semiconductor substrate and electrically isolating adjacent active regions from each other; and gate electrodes extending over the active regions respectively and arranged in the first direction. The first element isolating region includes a first region extending in a second direction orthogonal to the first direction and a second region extending in a direction intersecting the first region, one gate electrode of adjacent gate electrodes has a first edge side which includes a first overlap part placed on the second region, and another gate electrode of the adjacent gate electrodes has a second edge side which faces the first edge side and includes a second overlap part placed on the second region.

主权项

1. A semiconductor device comprising:
a plurality of active regions formed in a semiconductor substrate, the plurality of active regions being arranged in a first direction which is parallel to a surface of the semiconductor substrate; a first element isolating region formed in the semiconductor substrate, the first element isolating region electrically isolating adjacent active regions out of the plurality of active regions from each other; and a plurality of gate electrodes formed on the surface of the semiconductor substrate so that the plurality of the gate electrodes extends over the plurality of active regions respectively, the plurality of gate electrodes being arranged in the first direction; wherein the first element isolating region includes, between the adjacent active regions, a first region extending in a second direction which is parallel to the surface and orthogonal to the first direction and a second region extending in a direction which is parallel to the surface and intersects the first region, one gate electrode of adjacent gate electrodes out of the plurality of gate electrodes has a first edge side which includes a first overlap part placed on the second region, and another gate electrode of the adjacent gate electrodes has a second edge side which faces the first edge side and includes a second overlap part placed on the second region.