发明名称 |
Self-adjusting gate hard mask |
摘要 |
An intermediate wafer includes a substrate having a surface and a first dummy gate plug disposed upon a structure, e.g., a FIN, supported by the substrate surface; a second dummy gate plug disposed upon the substrate surface; and a first layer in which the first dummy gate plug and the second dummy gate plug are embedded. The first layer exhibits a non-planar surface topography characterized by a depression due at least to a presence of the first dummy gate plug. The structure further includes a second layer that fills the depression to the surface of the first layer, and a third layer that overlies the first layer and the second layer. The third layer is formed of a hard mask material and has a substantially planar surface topography over the first and second dummy gate plugs and over the depression that is filled with the material of the second layer. |
申请公布号 |
US8841726(B2) |
申请公布日期 |
2014.09.23 |
申请号 |
US201313962245 |
申请日期 |
2013.08.08 |
申请人 |
International Business Machines Corporation |
发明人 |
Leobandung Effendi |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
Harrington & Smith |
代理人 |
Harrington & Smith ;Percello Louis J. |
主权项 |
1. An intermediate wafer comprising:
a substrate having a dielectric layer disposed thereon, the dielectric layer having a surface upon which a structure is disposed, the structure comprised of a fin formed from a patterned portion of a silicon on insulator (SOI) layer that is disposed upon and in contact with the surface of the dielectric layer, the fin having a top surface disposed at a height (h) above the surface of the dielectric layer; a first dummy gate plug disposed upon the top surface of the fin; a second dummy gate plug disposed upon the surface of the dielectric layer, where a top surface of the first dummy gate plug is disposed above a top surface of the second dummy gate plug by at least the height (h); a first layer in which the first dummy gate plug and the second dummy gate plug are embedded, the first layer having a surface exhibiting a non-planar surface topography characterized by a depression due at least to a presence of the first dummy gate plug that is disposed upon the top surface of the fin; a second layer comprised of a material that fills the depression in the surface of the first layer, the second layer having a first surface in contact with the surface of the first layer only within the depression, the second layer having a second surface that is substantially coplanar with the surface of the first layer; and a third layer overlying and in contact with the surface of the first layer and in contact with the second surface of the second layer, the third layer being comprised of a hard mask material, the third layer having a substantially planar surface topography over the first dummy gate plug, over the second dummy gate plug, and over the depression that is filled with the material of the second layer. |
地址 |
Armonk NY US |