Semiconductor structure and method for slimming spacer

摘要

A semiconductor structure including a substrate and a gate structure disposed on the substrate is disclosed. The gate structure includes a gate dielectric layer disposed on the substrate, a gate material layer disposed on the gate dielectric layer and an outer spacer with a rectangular cross section. The top surface of the outer spacer is lower than the top surface of the gate material layer.

主权项

1. A method for lowering the height of a spacer, comprising:
providing a gate structure disposed on a substrate, said gate structure comprising:
a gate dielectric layer disposed on said substrate;a gate material layer disposed on said gate dielectric layer; andan outer spacer with a sail-like cross section and adjacent to said gate dielectric layer and said gate material layer; and performing an oxidative slimming procedure to slim the height of said outer spacer without substantially slimming the width of said outer spacer to make said outer spacer have a rectangular cross section, wherein the width of said rectangular cross section is larger than the height of said rectangular cross section.