Strain-inducing semiconductor regions

摘要

A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In another embodiment, a semiconductor region with a crystalline lattice of one or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate, and wherein all species of charge-neutral lattice-forming atoms of the semiconductor region are contained in the crystalline substrate.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a three-dimensional semiconductor structure above a substrate, the three-dimensional semiconductor structure comprising a first crystalline lattice of one or more species of charge-neutral lattice-forming atoms and having a first lattice constant; forming a gate dielectric layer around a portion of the three-dimensional semiconductor structure; forming a gate electrode around the gate dielectric layer; removing a portion of the three-dimensional semiconductor structure on either side of the gate dielectric layer and the gate electrode to provide a three-dimensional channel region; and forming a three-dimensional source region disposed laterally adjacent to a first end of the three-dimensional channel region and forming a three-dimensional drain region disposed laterally adjacent to a second end of the three-dimensional channel region, wherein the three-dimensional source and drain regions comprise a second crystalline lattice of one or more species of charge-neutral lattice-forming atoms and having a second lattice constant different from the first lattice constant, and wherein all species of charge-neutral lattice-forming atoms contained in the second crystalline lattice are contained in the first crystalline lattice.