| 摘要 |
The present invention relates to an optimum process for removing nitrogen in semiconductor rinsing wastewater and, more specifically, to an effective treatment process of NH_4OH, H_2O_2, and citric acid which are main components of standard clean 1 (SC-1) wastewater which is a treatment target material in semiconductor rinsing wastewater. The present invention has a purpose of developing an optimum process for removing nitrogen in semiconductor rinsing wastewater for processing nitrogen removal in the semiconductor rinsing wastewater which decides controllable factors among the amount of inflowing semiconductor rinsing wastewater, SS density of returned sludge, SS density of inflowing water, and amount of returned sludge which are parameters of MLSS density to continuously maintain the optimum MLSS density. |
