BONDING MATERIAL, SEMICONDUCTOR DEVICE ARRANGED BY USE THEREOF, WIRING MATERIAL, AND WIRING LINE FOR ELECTRONIC ELEMENT ARRANGED BY USE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a bonding material which makes possible to form a bonding layer with a high bonding strength at a low temperature (specifically, 400°C or below), and to provide a semiconductor device arranged by use of the bonding material.SOLUTION: A bonding material comprises 98-90 mass% of Cu nano particles and 2-10 mass% of Ni nano particles to all of metal nano particles. In the bonding material, the metal nano particles having diameters in a range of 1-1000 nm account for 99% or more to the total number of all of the metal particles on a number basis. A semiconductor device comprises a semiconductor element 1, a substrate 2, and a bonding layer 3a, 3b bonding between the semiconductor element and the substrate; the bonding layer is composed of a Cu-Ni mixture layer formed by the bonding material.