| 摘要 |
PROBLEM TO BE SOLVED: To provide an MRAM sensing reference trimming method and a memory device.SOLUTION: In an embodiment, a trimming process of setting reference current to be used for operating an MRAM module including: an operation MRAM cell to be coupled to a bit line; a plurality of reference MRAM cells to be coupled to a reference bit line; and a sense amplifier to be coupled to the bit line and the reference bit line is disclosed. The process includes a step of providing reference cell current to be generated from the total of individual current by the plurality of reference MRAM cells by adding bit line reference voltage to the reference bit line. Reference cell current is detected. Whether or not the detected reference cell current is different from target reference cell current is determined. When it is determined that the detected reference cell current is different from the target reference cell current, the bit line reference voltage varies, or a detection ratio of a sense amplifier varies. |
