发明名称 |
SINGLE ELECTRON TRANSISTOR AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a single electron transistor and a method of fabricating the same.SOLUTION: A transistor includes: a channel region including linkers formed on a substrate and metallic nanoparticles grown from metal ions bonded to the linkers; a source region disposed at one end of the channel region; a drain region disposed at the other end of the channel region and facing the source region; and a gate coupled to the channel region to control migration of charges in the channel region.</p> |
申请公布号 |
JP2014175657(A) |
申请公布日期 |
2014.09.22 |
申请号 |
JP20140041343 |
申请日期 |
2014.03.04 |
申请人 |
SK INNOVATION CO LTD |
发明人 |
KIM JUN HYUNG;LEE YOUNG KEUN;YOU HONG;AN SUNG JAE;KIM TAE HEE |
分类号 |
H01L29/786;B82Y30/00;B82Y40/00;H01L21/336;H01L29/06;H01L29/66;H01L51/05;H01L51/30 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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