发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A silicon carbide layer is thermally etched by supplying the silicon carbide layer with a process gas that can chemically react with silicon carbide, while heating the silicon carbide layer. With this thermal etching, a carbon film is formed on the silicon carbide layer. Heat treatment is provided to the silicon carbide layer to diffuse carbon from the carbon film into the silicon carbide layer. |
申请公布号 |
KR20140112009(A) |
申请公布日期 |
2014.09.22 |
申请号 |
KR20147014584 |
申请日期 |
2012.11.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OFSCIENCE AND TECHNOLOGY |
发明人 |
HIYOSHI TORU;MASUDA TAKEYOSHI;HATAYAMA TOMOAKI |
分类号 |
H01L29/16;H01L21/336;H01L29/12;H01L29/739;H01L29/78 |
主分类号 |
H01L29/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|