IMPURITY THERMAL DIFFUSION TREATMENT PROCESS OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide an impurity thermal diffusion treatment process arranged to suppress the diffusion of an impurity into a portion other than a surface layer to diffuse the impurity into in performing a thermal diffusion of the impurity into the outermost surface of a semiconductor wafer.SOLUTION: An impurity thermal diffusion treatment process of a semiconductor wafer is a process for performing a thermal diffusion of an impurity into a surface layer ranging to a depth of 10 μm from a surface of the semiconductor wafer. The process comprises the step of applying silica sol to a surface of the semiconductor wafer on the side opposite to a surface to diffuse the impurity into, thereby suppressing thermal diffusion of the impurity into a portion other than the surface layer.