COMPOSITE MULTILAYER SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a composite multilayer substrate in which a group III nitride semiconductor layer obtained by epitaxial growth and a support substrate are uniformly bonded; and provide a manufacturing method of a group III nitride semiconductor device which enables easy manufacturing of a group III nitride semiconductor device by manufacturing the composite multilayer substrate.SOLUTION: A composite multilayer substrate comprises: a support substrate 50 which includes a principal surface and recesses 51 formed on a periphery of the principal surface; and a group III nitride semiconductor layer 40 connected to a central part 52 of the principal surface surrounded by the recesses 51 on the support substrate 50, in which a width W of the central part 52 of the support substrate 50 is smaller than a width of the group III nitride semiconductor layer.