INTERNAL VOLTAGE GENERATION CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide an internal voltage generation circuit that has a high current supply capability, a high reliability, and a low cost.SOLUTION: A semiconductor device generates an internal power supply voltage VDD by stepping down an external power supply voltage VCC, drives a charge pump circuit CP by generating clock signals MCLK and PRCLK whose amplitudes are equal to that of the internal power supply voltage VDD when the external power supply voltage VCC is higher than a threshold voltage VTH, and drives the charge pump circuit CP by generating clock signals MCLK and PRCLK whose amplitudes are equal to that of the external power supply voltage VCC when the external power supply voltage VCC is lower than the threshold voltage VTH. This construction makes it possible to cause an operation to be performed without giving an excessive stress to transistors 19 to 21 in the charge pump circuit CP and ensure a large current supply capability.