| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which thermal stress, occurring between a semiconductor element and a support, is relaxed without lowering the thermal conductivity at the connection of the semiconductor element and support, and thereby destruction due to thermal stress can be avoided while ensuring superior heat dissipation.SOLUTION: In a semiconductor device, a groove 21 of a cathode electrode 9 made of Au and a protrusion 22 of a solder layer 4 made of an Au/Sn eutectic alloy are fitted, and the cathode electrode 9 is bonded to an SiC semiconductor laminate 20 on the first bonding surface 9B on the reverse side of the second bonding surface 9A to the solder layer 4, and has ductility higher than that of the solder layer 4. Consequently, when the solder layer 4 is expanded or contracted by heating or cooling, the cathode electrode 9 deforms plastically by receiving a force from the protrusion 22 of the solder layer 4 at the groove 21. By the plastic deformation of the cathode electrode 9, thermal stress occurring between an SiC GTO thyristor element 1 and a support 3 can be relaxed. |
