SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To appropriately form a resist pattern on a substrate.SOLUTION: A resist film 401 is formed on a process target film 400 of a wafer W (Fig.8(a)). The resist film 401 is exposed along a predetermined pattern to form an exposed portion 402 and an unexposed portion 403 in the resist film 401 (Fig.8(b)). An alcohol is made to intrude into the exposed portion 402 and a metal 404 is made to infiltrate via the alcohol into the exposed portion 402 (Fig.8(c)). The metal deposited on the unexposed portion 403 is removed. The unexposed portion 403 is removed to form a resist pattern 405 on the wafer W (Fig.8(d)). The process target film 400 is etched by using the resist pattern 405 as a mask to form a predetermined pattern 406 in the process target film 400 (Fig.8(e)).