METHOD AND APPARATUS FOR MRAM SENSE REFERENCE TRIMMING

摘要

Provided is a trimming process to set a reference current used for the operation of an MRAM module including an operational MRAM cell coupled with a bit line, multiple reference MRAM cells coupled with a reference bit line, and a sensing amplifier coupled the referent bit line and the bit line. The process includes applying a bit line reference voltage to the reference bit line to provide a reference cell current formed by the sum of each current through the reference MRAM cells. The reference cell current is detected. Whether the detected reference cell current is different from a target reference cell current is determined. If the reference cell current is different from the target reference cell current, the bit line reference voltage is changed or the sensing ratio of the sensing amplifier is changed.