OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide an oxide for a semiconductor layer of a thin film transistor having high mobility and reduced defect density.SOLUTION: The oxide for a semiconductor layer of a thin film transistor contains an oxide composed of metal elements of In, Zn, and Sn, wherein defect density of the oxide is 7.5×10cmor less, and mobility is 15 cm/Vs or more.