SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a manufacturing method of the same, which can improve reliability of wiring.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: preparing a silicon carbide substrate 10 on which a gate insulation film 20 is provided in contact with a first principal surface 10a and a gate electrode 30 is provided in contact with the gate insulation film 20 and a source region 15 is exposed on the first principal surface 10a; forming a first recess 46 having a first inner wall surface 46a in an interlayer insulation film 40 by performing first isotropic etching on the interlayer insulation film 40 by using a mask layer 45; forming a second recess 47 having a second inner wall surface 47a by performing first isotropic etching on the interlayer insulation film 40 and the gate insulation film 20 by using the mask layer 45 to expose the source region 15 from the gate insulation film 20; and forming wiring 60 which is arranged in contact with the first inner wall surface 46a and the second inner wall surface 47a and electrically connected with the source electrode 50.