SELECTIVE EPITAXIAL GROWTH METHOD AND DEPOSITION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a selective epitaxial growth method capable of suppressing an increase in processing time without deteriorating crystallinity of an epitaxial layer and flatness of a surface of the epitaxial layer.SOLUTION: A selective epitaxial growth method includes the steps of: growing an epitaxial layer on an epitaxial growth region by supplying a material gas onto a growth suppression film under a first processing pressure (step 4); removing the deposit deposited due to supply of the material gas onto the growth suppression film in the step 4 (step 5); growing a new epitaxial layer on the epitaxial layer grown on the epitaxial growth region by supplying the material gas onto the growth suppression film under a second processing pressure higher than the first processing pressure (step 6); and removing the deposit deposited due to supply of the material gas onto the growth suppression film in the step 6 (step 7). This method repeats the step 6 and the step 7 until the epitaxial layer reaches a designed film thickness.