| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory capable of facilitating operation control and circuit layout designing while increasing the operation speed such as reading speed, writing speed and deleting speed.SOLUTION: The non-volatile semiconductor memory includes: a semiconductor substrate 30; a first layer BG formed above the semiconductor substrate; a first conductive layer CG, an inter-electrode insulation layer 53a and a second conductive layer CG which are laminated above the first layer; a memory layer formed over the inner surface of a pair of though holes 49 which are formed in the first conductive layer, the inter-electrode insulation layer and second conductive layer; a semiconductor layer SP formed over the memory layer within the pair of though holes and at least a part of which is crystallized; and a metal layer 70 which is in contact with the semiconductor layer and which is formed at least in a part of the though hole and/or at least a part within a connection hole connecting the bottom ends of the pair of though holes formed in the first layer.</p> |
