发明名称 SYSTEM AND METHOD FOR AN IMPROVED INTERCONNECT STRUCTURE
摘要 Presented herein are an interconnect structure and method for forming the same. The interconnect structure comprises a contact pad disposed over a substrate and a connector disposed over the substrate and spaced apart from the contact pad. A passivation layer is disposed over the contact pad and over the connector, and includes a contact pad opening, a connector opening and a mounting pad opening. A post passivation layer comprising a trace and a mounting pad is disposed over the passivation layer. The trace may be disposed in the contact pad opening and contacts the mounting pad, and further disposed in the connector opening and contacts the connector. The mounting pad may be disposed in the mounting pad opening and contacts the opening. The mounting pad is separated from the trace by a trace gap, wherein the trace gap may optionally be at least 10 μm.
申请公布号 KR20140111910(A) 申请公布日期 2014.09.22
申请号 KR20130068840 申请日期 2013.06.17
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHEN HSIEN WEI;TSAI HAO YI;LII MIRNG JI;YU CHEN HUA;YU TSUNG YUAN
分类号 H01L21/60;H01L21/768 主分类号 H01L21/60
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