发明名称 |
METAL CAP APPARATUS AND METHOD |
摘要 |
Provided is a method for forming a metal cap in a via opening with an electroless manner. The method comprises bringing a via into contact with a metal solution and forming a metal cap in an opening and while being in contact with the via. The via is disposed in an opening on a substrate. The metal cap is formed by an electroless chemical reaction. The metal solution may be applied to the via to form the metal cap. The metal solution may contain at least cobalt, and the cap may contain at least cobalt, and may optionally further contain tungsten. The step of forming the cap comprises forming the cap to further contain at least tungsten. The metal solution may further contain at least hypophosphite or dimethlyaminoborane. |
申请公布号 |
KR20140111930(A) |
申请公布日期 |
2014.09.22 |
申请号 |
KR20130129019 |
申请日期 |
2013.10.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YANG LIANG YUEH OU;CHANG CHIH YI;KAO CHEN YUAN;SU HUNG WEN |
分类号 |
H01L21/60;H01L21/288;H01L21/3205 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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