| 摘要 |
PROBLEM TO BE SOLVED: To provide a practical semiconductor light-emitting element that obtaining polychromatic light having high efficiency and evenness, and to provide a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting element including a light reflection layer, first to fourth semiconductor layers, and first and second light-emitting layers. The second semiconductor layer is provided between the first semiconductor layer and the light reflection layer. The first light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. A first light-transmitting layer is provided between the second semiconductor layer and the light reflection layer, and has light permeability. The third semiconductor layer is provided between the first light-transmitting layer and the light reflection layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflection layer. The second light-emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer, and emits light having wavelength different from light emitted from the first light-emitting layer. The light reflection layer is electrically connected to any of the third and fourth semiconductor layers. The thickness of the first light-transmitting layer is ten times or more of the distance between the second light-emitting layer and the light reflection layer. |
