发明名称 |
METHOD AND APPARATUS FOR FORMING CHARACTERIZATION PARAMETER OF RESISTIVE MEMORY ELEMENT |
摘要 |
<p>PROBLEM TO BE SOLVED: To form a characterization parameter of a resistive memory element.SOLUTION: An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a minimum programming time or minimum programming voltage step of each resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.</p> |
申请公布号 |
JP2014175039(A) |
申请公布日期 |
2014.09.22 |
申请号 |
JP20140042771 |
申请日期 |
2014.03.05 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
RYAN JAMES GOSS;MARK ALLEN GAERTNER;KHOUEIR ANTOINE;DAVID SCOTT EBSEN;TRANTHAM JON D |
分类号 |
G11C13/00;H01L27/105;H01L45/00;H01L49/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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