发明名称 METHOD AND APPARATUS FOR FORMING CHARACTERIZATION PARAMETER OF RESISTIVE MEMORY ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To form a characterization parameter of a resistive memory element.SOLUTION: An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a minimum programming time or minimum programming voltage step of each resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.</p>
申请公布号 JP2014175039(A) 申请公布日期 2014.09.22
申请号 JP20140042771 申请日期 2014.03.05
申请人 SEAGATE TECHNOLOGY LLC 发明人 RYAN JAMES GOSS;MARK ALLEN GAERTNER;KHOUEIR ANTOINE;DAVID SCOTT EBSEN;TRANTHAM JON D
分类号 G11C13/00;H01L27/105;H01L45/00;H01L49/00 主分类号 G11C13/00
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