METHOD FOR REMOVING SURFACE OXIDE FILM OF GALINSTAN USING COPLANAR MICROFLUIDIC CHANNELS

摘要

The present invention relates to a method to remove an oxide film on the surface of liquid metal using a coplanar microfluidic channel. According to the present invention, the method to remove an oxide film on the surface of liquid metal using a coplanar microfluidic channel comprises: a step of applying a polydimethylsiloxane (PDMS) solution on the top of a microfluidic channel mold after the microfluidic channel mold is manufactured using photoresist (PR) on a silicon wafer; a step of separating the PDMS layer from the microfluidic channel mold after the cooling and coagulating steps are completed when the PDMS solution is applied; a step of forming a coplanar microfluidic channel by attaching a glass plate through oxygen plasma to the lower part of the separated PDMS layer; and a step of removing a galinstan oxide film by penetrating hydrochloric acid steam through a tube wall between a main channel and a supplemental channel by injecting a chloride solution into the supplemental channel after injecting galinstan into the main channel of the microfluidic channel. Therefore, the present invention has an effect of expanding the application range of galinstan by easily removing the oxide film on the surface of galinstan substituted for mercury which is a liquid metal.