摘要 |
PROBLEM TO BE SOLVED: To provide an oxide for a semiconductor layer of a thin film transistor having high mobility and reduced defect density.SOLUTION: The oxide for a semiconductor layer of a thin film transistor contains an oxide composed of metal elements of In, Ga, and Zn, wherein defect density of the oxide is 2×10cmor less, and mobility is 6 cm/Vs or more. |