| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent characteristic deterioration of a nonvolatile semiconductor storage device.SOLUTION: According to an embodiment, a nonvolatile semiconductor storage device comprises: a plurality of memory cell transistors including gate electrodes arranged in a matrix on a semiconductor substrate; word lines for connecting control gate electrodes in a column direction of the plurality of memory cell transistors; word-line lead-out parts each formed by drawing the word line to a lead-out region outside a cell region; and an air gap formation insulation film which covers an upper part so as to form air gaps among the gate electrodes. In the lead-out region of the semiconductor substrate, a semiconductor film for composing a floating gate electrode and an inter-electrode insulation film are formed on a whole area of a top face of the semiconductor substrate, and the lead-out parts of the word lines are formed on the inter-electrode insulation film and the air gap formation insulation film is formed so as to cover a top face of the inter-electrode insulation film and top faces of the lead-out parts of the word lines.</p> |
