发明名称 CURRENT CONTROL ELEMENT, NONVOLATILE MEMORY ELEMENT, NONVOLATILE STORAGE DEVICE, AND CURRENT CONTROL ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a current control element, with which it is possible to realize both of a high current drive capability and a favorable off characteristic even when the current control element is miniaturized.SOLUTION: A current control element includes an upper electrode 206, a lower electrode 201, and a current suppression layer 205 sandwiched between the upper electrode 206 and the lower electrode 201, wherein the current suppression layer 205 is obtained by laminating a first current suppression layer 202, a second current suppression layer 203, and a third current suppression layer 204 in this order, with the first current suppression layer 202 and the third current suppression layer 204 being made of a metal not containing oxygen, a metallic compound not containing oxygen, a semiconductor not containing oxygen, or a semiconductor compound not containing oxygen, the second current suppression layer 203 being made of a metallic oxide or a semiconductor oxide, and a height of an energy barrier of the second current suppression layer 203 being lower than those of the first current suppression layer 202 and the third current suppression layer 204.
申请公布号 JP2014175419(A) 申请公布日期 2014.09.22
申请号 JP20130045968 申请日期 2013.03.07
申请人 PANASONIC CORP 发明人 HAYAKAWA YUKIO;YONEDA SHINICHI;MIYANAGA RYOKO
分类号 H01L27/105;H01L45/00;H01L49/00 主分类号 H01L27/105
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