发明名称 |
PHASE-CHANGE MEMORY AND SEMICONDUCTOR RECORD PLAYBACK SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide: a superlattice phase-change memory which enables the achievement of low power consumption; and a semiconductor record playback system.SOLUTION: A phase-change memory comprises a SnTe/SbTesuperlattice film produced by laminating a SnTefilm and an SbTefilm. The SnTe/SbTesuperlattice film includes: a SnTe/SbTesuperlattice phase including SnTe and SbTe; a SnSbTe alloy phase; and a Te phase. The SnTe/SbTesuperlattice phase is diluted by the SnSbTe alloy phase and the Te phase. In this state, X of the SnTefilm satisfies the following condition: 4≤X≤55 atom%. |
申请公布号 |
JP2014175528(A) |
申请公布日期 |
2014.09.22 |
申请号 |
JP20130048050 |
申请日期 |
2013.03.11 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
SOEYA SUSUMU;ODAKA TAKAHIRO;SHINTANI TOSHIMICHI;TOMINAGA JUNJI |
分类号 |
H01L27/105;G11C13/00;H01L45/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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