发明名称 PHASE-CHANGE MEMORY AND SEMICONDUCTOR RECORD PLAYBACK SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide: a superlattice phase-change memory which enables the achievement of low power consumption; and a semiconductor record playback system.SOLUTION: A phase-change memory comprises a SnTe/SbTesuperlattice film produced by laminating a SnTefilm and an SbTefilm. The SnTe/SbTesuperlattice film includes: a SnTe/SbTesuperlattice phase including SnTe and SbTe; a SnSbTe alloy phase; and a Te phase. The SnTe/SbTesuperlattice phase is diluted by the SnSbTe alloy phase and the Te phase. In this state, X of the SnTefilm satisfies the following condition: 4≤X≤55 atom%.
申请公布号 JP2014175528(A) 申请公布日期 2014.09.22
申请号 JP20130048050 申请日期 2013.03.11
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 SOEYA SUSUMU;ODAKA TAKAHIRO;SHINTANI TOSHIMICHI;TOMINAGA JUNJI
分类号 H01L27/105;G11C13/00;H01L45/00 主分类号 H01L27/105
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